搜索结果: 1-15 共查到“知识库 电子科学与技术 CMOS”相关记录83条 . 查询时间(0.03 秒)
高速CMOS图像传感器能将人眼无法分辨的高速过程记录下来,是观察和研究高速运动物体或瞬变现象变化过程及规律的最有效工具之一。常规的CMOS图像传感芯片实时性低、体积大、功耗高,高速低功耗CMOS图像传感芯片具备成像速度快、集成度高和功耗低的优势,可广泛应用于工业自动化、体育运动、科学观测以及航空航天等领域。
As CMOS 160Mb/s Phase Modulation I/O Interface Circuit
CMOS Phase Modulation I/O Interface Circuit
2015/8/14
As CMOS 160Mb/s Phase Modulation I/O Interface Circuit.
A 640 512 CMOS Image Sensor with Ultrawide Dynamic Range Floating-Point Pixel-Level ADC
Analog-to-digital conversion (ADC) CMOS image sensors digital cameras dynamic range image sensors mixed analog–digital integrated circuits pixel-level ADC video cameras
2015/8/12
Analysis results demonstrate that multiple sampling can achieve consistently higher signal-to-noise ratio at equal or higher dynamic range than using other image sensor dynamic range enhancement schem...
A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors
Analog-to-digital conversion cameras CMOS image sensors image sensors mixed analog–digital integrated circuits pixel-level analog-to-digital converter (ADC) video cameras
2015/8/12
A multichannel bit-serial (MCBS) analog-to-digital converter (ADC) is presented. The ADC is ideally suited to pixel-level implementation in a CMOS image sensor. The ADC uses successive comparisons to ...
CMOS反相器低频噪声模型及可靠性表征研究
COMS反相器 低频噪声 可靠性 缺陷
2015/3/30
为了表征CMOS反相器的可靠性,从其负载电流和输出电压的特性入手,详细推导了一种基于载流子波动理论的低频噪声模型,并由实验数据验证了模型的准确性.由实验结果可知,负载电流功率谱密度随频率的增加而减小,遵循1/f噪声的变化规律;得到了负载电流归一化噪声功率谱密度与器件尺寸的关系.通过深入研究1/f 噪声与界面态陷阱密度的关系,验证了1/f噪声可用于表征CMOS反相器的可靠性,证明了噪声幅值越大,器件...
On-Chip True Random Number Generation in Nanometer CMOS
True Random Number Generation Process Variation Circuit calibration
2014/12/8
On-chip True Random Number Generator (TRNG) forms an integral part of a number of cryptographic systems in multi-core processors, communication networks and RFID. TRNG provides random keys, device id ...
N3ASICS: Designing Nanofabrics with Fine-Grained CMOS Integration
NASIC N3ASIC nanowires nano-CMOS hybrid systems 3-D integration
2014/12/8
Nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. These fabrics employ unconventional manufactu...
On Detection, Analysis and Characterization of Transient and Parametric Failures in Nano-scale CMOS VLSI
Automatic Test Pattern Generation Crosstalk Design-for-Testability Integrated Circuit Intermittent Failure Soft Error
2014/11/7
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin gets sharply eroded because of continuous lowering of device threshold voltage together with ever incr...
Cryptographic Circuit Design In Nanometer CMOS Technologies
Applied sciences Cryptographic circuit design Nanometer CMOS Embedded system security Hardware trojan Low-power design Physical unclonable function Process variation Side-channel analysis
2014/11/7
As increasingly important modules in modern embedded systems, cryptographic circuits rely on provable theorems to guarantee hardware security and information privacy. However, perfect security on sili...
应用于10Gb/s光接收机的全差分CMOS跨阻前置电路设计
光接收机 CMOS前置放大电路 跨阻放大器 限幅放大器
2014/9/24
设计了一种的低成本、低功耗的10 Gb/s光接收机全差跨阻前置放大电路。该电路由跨阻放大器、限幅放大器和输出缓冲电路组成,其可将微弱的光电流信号转换为摆幅为400 mVpp的差分电压信号。该全差分前置放大电路采用0.18 μm CMOS工艺进行设计,当光电二极管电容为250 fF时,该光接收机前置放大电路的跨阻增益为92 dBΩ,-3 dB带宽为7.9 GHz,平均等效输入噪声电流谱密度约为23 ...
抗电磁干扰低电压CMOS放大器设计
CMOS体驱动 低电压放大器 抗电磁干扰 直流非线性
2014/7/4
基于CMOS体驱动,提出低电压放大器抗电磁干扰结构.电路采用部分正反馈结构提高体驱动输入级的等效输入跨导,通过输入电压降结构改善体驱动结构的直流非线性,采用双输入级结构保证放大器良好的交流特性,同时,对称拓扑结构保证了电路的高度对称性,实现了对称的转换速率.该设计采用电源电压为1V的0.35μm标准CMOS工艺实现.对该放大器的抗电磁干扰特性进行理论分析与仿真验证,并同传统体驱动放大器相比较.实验...
出了基于CMOS图像传感器探测前向激光近轴的散射横面角和散射纵面角的概念. 使用CMOS采集了模拟气泡幕前向散射光动态图像序列,通过计算每帧灰度图像行和列像元均值将其可以用一个列向量和行向量表示,从而图像序列可以用一个图像序列矩阵描述. 实验模拟了压强0.005 MPa和0.01 MPa产生的气泡幕,通过计算两种压强产生的气泡幕前向光散射图像序列的横向灰度均值和纵向灰度均值,定性分析了100帧图像...
本文提出了一种适用于IEEE 802.15.4标准的2.4GHz免认证ISM频段的全集成CMOS射频收发机.接收机采用低中频结构以降低功耗、提高灵敏度,发射机则采用直接上变频结构以降低设计复杂度和功耗.芯片采用0.18μm 1P4M CMOS工艺以及MIM电容制造,供电电压1.8V.测试结果显示,在误包率为1%时,接收机灵敏度达到了-97dBm,发射机输出至100Ω差分天线端口的最大输出功率为+3...
本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC 0.18-μm CMOS工艺设计并制造,芯片总面积为1.67mm2.测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2dB至4dB,其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.