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0.8μm CMOS LDD器件可靠性实验和分析
亚微米LDD器件 模拟 可靠性
2009/9/1
针对实验中发现的亚微米LDD结构的特殊的衬底电流现象和退化现象,进行了二维器件数值模拟,解释了LDD器件退化的原因,最后提出了LDD器件的优化工艺条件。
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2002/7/3
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects
Surface potential Threshold voltage LDD nMOSFET Defects
2000/7/12
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n&#...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
1997/7/22
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...