搜索结果: 16-30 共查到“电子科学与技术 CMOS”相关记录115条 . 查询时间(0.112 秒)
电子科技大学成都学院集成电路原理课件第七章 CMOS基本逻辑单元。
西南交通大学信息科学与技术学院数字电子技术课件第四章 CMOS器件。
As CMOS 160Mb/s Phase Modulation I/O Interface Circuit
CMOS Phase Modulation I/O Interface Circuit
2015/8/14
As CMOS 160Mb/s Phase Modulation I/O Interface Circuit.
A 640 512 CMOS Image Sensor with Ultrawide Dynamic Range Floating-Point Pixel-Level ADC
Analog-to-digital conversion (ADC) CMOS image sensors digital cameras dynamic range image sensors mixed analog–digital integrated circuits pixel-level ADC video cameras
2015/8/12
Analysis results demonstrate that multiple sampling can achieve consistently higher signal-to-noise ratio at equal or higher dynamic range than using other image sensor dynamic range enhancement schem...
A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors
Analog-to-digital conversion cameras CMOS image sensors image sensors mixed analog–digital integrated circuits pixel-level analog-to-digital converter (ADC) video cameras
2015/8/12
A multichannel bit-serial (MCBS) analog-to-digital converter (ADC) is presented. The ADC is ideally suited to pixel-level implementation in a CMOS image sensor. The ADC uses successive comparisons to ...
CMOS反相器低频噪声模型及可靠性表征研究
COMS反相器 低频噪声 可靠性 缺陷
2015/3/30
为了表征CMOS反相器的可靠性，从其负载电流和输出电压的特性入手，详细推导了一种基于载流子波动理论的低频噪声模型，并由实验数据验证了模型的准确性.由实验结果可知，负载电流功率谱密度随频率的增加而减小，遵循1/f噪声的变化规律；得到了负载电流归一化噪声功率谱密度与器件尺寸的关系.通过深入研究1/f 噪声与界面态陷阱密度的关系，验证了1/f噪声可用于表征CMOS反相器的可靠性，证明了噪声幅值越大，器件...
2014年12月2—4日，中国科学院微电子研究所举办了 Si基CMOS器件及光电器件技术高级研讨培训班。本次培训获得了院人事局培训资金的支持，共分六个主题研修内容，分别由中国科学院微电子研究所集成电路先导工艺研发中心四位中组部“千人计划”专家、两位国际知名学者主讲。院内外从事集成电路器件与工艺和硅基光电子器件研究的工程技术人员、科研工作者及研究生共近200人参加了培训。
On-Chip True Random Number Generation in Nanometer CMOS
True Random Number Generation Process Variation Circuit calibration
2014/12/8
On-chip True Random Number Generator (TRNG) forms an integral part of a number of cryptographic systems in multi-core processors, communication networks and RFID. TRNG provides random keys, device id ...
N3ASICS: Designing Nanofabrics with Fine-Grained CMOS Integration
NASIC N3ASIC nanowires nano-CMOS hybrid systems 3-D integration
2014/12/8
Nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. These fabrics employ unconventional manufactu...
On Detection, Analysis and Characterization of Transient and Parametric Failures in Nano-scale CMOS VLSI
Automatic Test Pattern Generation Crosstalk Design-for-Testability Integrated Circuit Intermittent Failure Soft Error
2014/11/7
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin gets sharply eroded because of continuous lowering of device threshold voltage together with ever incr...
Cryptographic Circuit Design In Nanometer CMOS Technologies
Applied sciences Cryptographic circuit design Nanometer CMOS Embedded system security Hardware trojan Low-power design Physical unclonable function Process variation Side-channel analysis
2014/11/7
As increasingly important modules in modern embedded systems, cryptographic circuits rely on provable theorems to guarantee hardware security and information privacy. However, perfect security on sili...
应用于10Gb/s光接收机的全差分CMOS跨阻前置电路设计
光接收机 CMOS前置放大电路 跨阻放大器 限幅放大器
2014/9/24
设计了一种的低成本、低功耗的10 Gb/s光接收机全差跨阻前置放大电路。该电路由跨阻放大器、限幅放大器和输出缓冲电路组成,其可将微弱的光电流信号转换为摆幅为400 mVpp的差分电压信号。该全差分前置放大电路采用0.18 μm CMOS工艺进行设计,当光电二极管电容为250 fF时,该光接收机前置放大电路的跨阻增益为92 dBΩ,-3 dB带宽为7.9 GHz,平均等效输入噪声电流谱密度约为23 ...
西安理工大学半导体集成电路课件第5章 CMOS静态逻辑门（三）。
西安理工大学半导体集成电路课件第5章 CMOS静态逻辑门（一）。