搜索结果: 31-45 共查到“光学工程 Si”相关记录61条 . 查询时间(0.123 秒)
Mo/Si多层膜表面保护层设计
薄膜光学 多层膜 表面保护层
2009/8/14
为提高Mo/Si多层膜的稳定性与使用寿命，通过分析多层膜驻波电场的分布，对表面保护层及多层膜最上层材料的厚度进行优化设计，使优化后的反射率最高.计算表明，一定厚度的表面保护层总对应一个最优的最上层材料厚度.在13.36 nm波长，膜对数为50的Mo/Si多层膜10度入射的理论反射率为74.47%；当添加厚度为2.3 nm的Ru作为表面保护层，对应多层膜最上层Si的优化厚度为3.93 nm，其理论反...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2009/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Ge-on-Si Photodetectors for Optical Communications
Ge-on-Si Photodetectors Optical Communications
2009/7/17
Ge-on-Si waveguide integrated photodetectors including Metal-Semiconductor-Metal (MSM), vertical PIN and lateral PIN diodes are reviewed.
Photonics and Electronics integration is considered using molecular wafer bonding of an optical SOI processed wafer on top of an electronics wafer. InP sources and Ge photodetectors are processed toge...
To clear fundamental limits of electrical interconnection, WDM optical interconnection should be implemented in Si photonics. Challenging issues are strongly connected with temperatures in CMOS proces...
Large Scale Integration of Photonic Integrated Circuits on Indium Phosphide and High-Index-Contrast Si Platforms
Large Scale Integration Photonic Integrated Circuits Indium Phosphide High-Index-Contrast Si Platforms
2009/7/14
We report on development of large-scale and high functionality photonic integrated circuits on InP and Si platforms for transmitter, receiver, filtering and routing applications and discuss the merits...
Structural, electrical and optical properties of AZO/SiO2/p-Si SIS heterojunction prepared by magnetron sputtering
Al-doped ZnO sputtering SIS heterojunction current–voltage (I–V ) characteristics
2009/6/22
ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type
texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si
heterojunction, a...
High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films
Poly-Si TFT Laser crystallization Lateral crystal growth
2009/6/9
The liquid-solid interface motion and the temperature history of thin Si films during short pulse (< 30 ns) excimer laser annealing are observed by in-situ diagnostics. Substantial supercooling (> 200...
Fabrication of High Quality Poly-Si TFTs by Using Ar-Laser Irradiated Sputter-Si Films
Polycrystalline Si Sputtering Ar-laser
2009/6/9
Precursor a-Si films are deposited by RF planar magnetron sputtering in argon gas at 200 °C substrate temperature. Properties of the a-Si films have large dependences on sputtering gas pressure. Sheet...
A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration
Si CMOS Platform Device Diversity Photonics Integration
2009/5/19
Integrated photonics via Si CMOS technology has been a strategic area since electronics and photonics convergence should be the next platform for information technology. The platform is recently refer...
用分子束外延(MBE)技术, 在GaAs(100)衬底上生长了不同Si掺杂浓度（从1016 cm-3到1018 cm-3）的n-GaAs薄膜。通过在室温下拉曼光谱的测量对n-GaAs薄膜的谱形进行了分析，拉曼位移出现了明显的移动，光学横模TO峰相对的增强，光学纵模LO峰相对的减弱。文章分析了原因这是由于Si掺杂浓度不断的提高，致使界面失配位错不断地提高造成的，内部应力也在不断的增大，原来的晶格振动...
The effect of the T6 heat treatment on the surface structure and oxide layer of an Al-Si coat
Al-Si coatings T6 treatment oxides Al2O3/SiO2
2009/4/11
The paper presents investigation results for an Al-Si protective coat deposited from a liquid phase on the ferritic steel surface. A coat of chemical composition of Al - 6.5 wt.% Si was subjected to a...
1.3μm GeSi/Si异质结波导光栅耦合器的设计
1.3μm GeSi/Si异质结 波导 光栅耦合器
2009/1/19
1.3μm GeSi/Si异质结波导光栅耦合器的设计.