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Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Modeling and Measurements of Novel Monolithic Filters
Novel Monolithic Filters hairpin resonators ferroelectric materials
2008/6/24
This paper presents novel multilayer tuneable high Q-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size tha...
Behavioral Modeling for Simulation of MOEMS Systems
Behavioral Modeling Simulation MOEMS Systems
2004/3/21
Integrated MOEMS systems are a rapidly growing field with great potential. Accurate simulation of MOEMS systems will allow analysis and optimization of system performance before costly and time-consum...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2002/7/3
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...