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Motivated by the design of an integrated CMOS-based detection platform, a simulation model for CCD and CMOS imager-based luminescence detection systems is developed. The model comprises four parts. Th...
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Modern semiconductor manufacturing requires photolithographic printing of subillumination wavelength features in photoresist via electromagnetic energy scattered by complicated photomask designs. This...
In this paper a systematic modeling and control approach for flow problems is considered. A nonlinear Galerkin model is obtained from the partial differential equations (PDEs) describing the flow; and...
Surface Wave High Frequency Radars (SWHFR) are taken into account in the content of modeling and simulation challenges. Examples related to multi-mixed path surface wave propagation, radar cross secti...
Timing driven physical design, synthesis, and optimization tools need efficient closed-form delay models for estimating the delay associated with each net in an integrated circuit (IC) design. The ...
This paper presents novel multilayer tuneable high Q-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size tha...
Integrated MOEMS systems are a rapidly growing field with great potential. Accurate simulation of MOEMS systems will allow analysis and optimization of system performance before costly and time-consum...
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n&#...
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spati...
I order to increase the reliability of numerical models for the design of optical multi-channel WDM transmission systems all significant nonlinear effects are simultaneously included in our fiber mo...
For optical signal processing an electro-optic device with two parallel ridge waveguides is proposed.Both are coupled by Bragg gratings with diagonal gratinglines which are buried in the waveguidingla...

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