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中国科学院半导体研究所超晶格国家重点实验室高速图像传感及信息处理课题组副研究员刘力源等研制出面向860GHz CMOS太赫兹图像传感器的像素器件。相关研究成果将于2017年在太赫兹领域学术期刊IEEE Transaction on Terahertz Science and Technology 上发表。太赫兹 (Terahertz, THz) 波是指频率在0.3 THz - 3 THz 范围内,...
研究了电子辐射剂量对CMOS图像传感器性能的影响,性能参数为平均暗电流输出和光强响应度。搭建了电子辐射场和光强响应度的测量系统,在器件处于工作状态和非工作状态下分别对其辐射,辐射剂量为:5×103 rad、1×104 rad、7×104 rad、1×105 rad、5×105 rad。对于暗电流,当辐射总剂量超过7×104 rad~1×105 rad之间的某一个阈值时,暗电流随着辐射剂量的增长基本...
A 0.5p,m Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS.
CMOS image sensors have benefited from technology scaling down to O.351um with only minor process modifications. Several studies have predicted that below O.25m, it will become difficult, if not impos...
As CMOS technology scales, the effect of 1/f noise on low frequency analog circuits such as CMOS image sensors becomes more pronounced, and therefore must be more accurately estimated. Analysis of 1/f...
We describe a programmable digital camera sensor with pixel-level analog-to-digital conversion (ADC). The sensor, which was designed and implemented by our group, is programmable in the sense that the...
Temporal noise sets a fundamental limit on image sensor performance, especially under low illumination and in video applications. In a CCD image sensor, temporal noise is well studied and characterize...
Techniques for characterizing CCD imagers have been developed over many years. These techniques have been recently modified and extended to CMOS PPS and APS imagers. With the scaling of CMOS technolog...
A Nyquist rate Multi-Channel Bit Serial (MCBS) ADC using successive comparisons is presented. The ADC is suited to pixel level implementation in a CMOS image sensor. It comprises a 1-bit comparator/la...
The standard method for measuring QE for a CCD sensor is not adequate for CMOS APS since it does not take into consideration the random offset, gain variations, and nonlinearity introduced by the APS ...
Fixed pattern noise (FPN) for a CCD sensor is modeled as a sample of a spatial white noise process. This model is,however, not adequate for characterizing FPN in CMOS sensors, since the readout circui...
Single Pixel Test Structures for Characterization and Comparative Analysis of CMOS Image Sensors.
A set of test structures designed to characterize and compare the performance of CMOS passive and active pixel image sensors is presented. The test structures are designed so that they can be rapidly ...
CMOS FPA with Multiplexed Pixel Level ADC.
A CMOS Area Image Sensor with Pixel-Level A/D Conversion.

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