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A new way to generate light using pre-existing defects in semiconductors（图）
半导体 高铟浓度 氮化铟镓LED
2021/11/1
Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at the Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, to...
Configuration of VLSI Arrays in the Presence of Defects
Circuit area fault tolerance percolation theory probabilistic analysis queuing processes systolic arrays
2015/8/14
The penalties for configuring VLSI arrays for yield enhancement are assessed. Each dement of the fabricated array is assumed to be defective with independent probability p. A fixed fractmn R of the el...
Configuration of VLSI Arrays in the Presence of Defects
Circuit area fault tolerance percolation theory probabilistic analysis queuing processes systolic arrays wafer-scale integration wire length
2015/8/12
The penalties for configuring VLSI arrays for yield enhancement are assessed. Each dement of the fabricated array is assumed to be defective with independent probability p. A fixed fractmn R of the el...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2002/7/3
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
A Development Methodology for Copper End Termination Paste — Part 1: Origin of Green Defects
capacitor termination ceramic capacitors Ni based electrodes green defects
2001/12/1
Copper (Cu) based pastes have emerged as the termination materials of choice for ceramic capacitors with base metal internal electrodes. To prevent oxidation of nickel (Ni) internal electrode and the ...
Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects
Surface potential Threshold voltage LDD nMOSFET Defects
2000/7/12
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n&#...
Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current oxide semiconductor energy level
1997/3/11
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependen...