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Fabrication of High Quality Poly-Si TFTs by Using Ar-Laser Irradiated Sputter-Si Films
Polycrystalline Si Sputtering Ar-laser
2009/6/9
Precursor a-Si films are deposited by RF planar magnetron sputtering in argon gas at 200 °C substrate temperature. Properties of the a-Si films have large dependences on sputtering gas pressure. Sheet...
期刊信息
篇名
Extraction of surface roughness from the central d-peak of light scattering using the multi-wavelength of Ar+ laser
语种
英文
撰写或编译
作者
Liu Deli, Qi Dongping, Cheng Chuanfu
第一作者单位
刊物名称
Chinese Jour...