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Photoluminescence of EuGa2Se4:Nd3+
Photoluminescence Intracentral Transitions Europium and Neodymium Ions
2012/3/28
The photoluminescence (PL) in temperature interval 77 - 300 K is investigated in Eu Ga2Se4:Nd polycrystals. It is established that broad band PL with maximum at 561nm is caused by intracentral transit...
Photoluminescence features of AgBr nanoparticles formed in porous glass matrices
porous glasses silver bromide nanoparticles luminescence properties quantum confinement
2010/5/14
The photoluminescence of AgBr nanoparticles formed by a two stage liquid-gas microsynthesis
technology in two types of porous glass with different sizes of pores was investigated. Polyvinyl
alcohol ...
Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology
photoluminescence spectroscopy quantum cascade lasers
2009/4/11
In this paper, we present the application of photoluminescence spectroscopy as a diagnostic method for evaluation of correctness and homogeneity of AlGaAs/GaAs test superlattices used in the developm...
Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing
rapid thermal annealing (RTA) Si+ implantation photoluminescence SiO2 films
2008/11/14
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen
flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions.
Room-temperature PL f...
Photoluminescence study of Nd3+-doped Si-rich silica films
Nd Si nanoclusters Si energy transfer
2006/2/28
Nd3+-doped silicon-rich silicon oxide thin films have been fabricated by reactive magnetron co-sputtering of a pure silica target topped with Nd2O3 chips. The incorporation of silicon excess in the fi...
Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers
photoluminescence InGaN quantum wells Monte Carlo simulation exciton hopping
2006/2/28
Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active lay...
Photoluminescence studies of TM and RE doped oxides using diamond anvil cell
diamond-anvil cells high pressure LiNbO3 Cr3+ dopant luminescence garnet crystals
2006/2/28
The present status of high-pressure research with the diamond anvil cell (DAC) is described, focusing mainly on use of this technique in optical spectroscopy. After a brief description of the history ...
Photoluminescence of poly(N-vinylcarbazole) thin films deposited by dip-coating technique
photoluminescence poly(N-vinylcarbazole) thin films dip-coating
2005/3/27
This paper is concerned with the photoluminescence (PL) study of poly(N-vinylcarbazole) (PVK) thin films deposited on the glass substrate by the dip-coating method. The PL spectra have been measured u...
Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collect...