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Study on determination of parasitic resistances in SiC MESFET’s
Extract the source drainage door parasitic resistance parasitic resistance resistance measurement
2014/12/31
This paper presents a simple analytical method for extracting the source, drain and gate parasitic resistances. The proposed method is based on the three simple DC measurements. The parasitic resistan...
Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
SiC—MESFET器件的夹断电压
碳化硅 夹断电压 界面态
2009/10/29
考虑空间电荷区杂质的非完全离化、SiC表面的界面态和反向漏电流等因素的影响，给出了较为精确的计算SiC—MESFET器件夹断电压的方法，计算的结果和实验值符合较好.
为了分析CDMA类宽带信号激励下MESFET功放的副谐波负载牵引特性,推导了一组基于MESFET非线性模型的功放电路Volterra转移函数解析式,利用此解析式,建立了三阶交调分量与副谐波负载的解析关系,分析了不同副谐波负载情况下副谐波牵引特性;并推导出了最优副谐波负载的表达式。该文还从两个三阶交调幅度的差异着手,证明了电抗性副谐波负载是造成这一差异的主要因素,上述推导得到的结果与采用ADS软件谐...
GaAs MESFET外延层中载流子浓度分布及漂移迁移率分布的实验测定
GaAs MESFET 载流子浓度 漂移迁移率
2008/10/27
提出一种根据 C_g-V_g及 G_i-V_g关系测定 GaA: MESFET外延层中载流子浓度分布n(h)及漂移迁移率分布μ(h)的方法.给出了一些典型外延材料的实验结果.证明n(h)和μ(h)是表征外延层质量的两个重要的参数.并且发现:不同类型的迁移率分布对应于不同的栅电容弛豫.指出用稳态高频栅电容C_g~*-V_g关系求得的是表观载流子浓度分布n~*(h)和表观迁移率分布μ~*(h).它们同...
Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collect...
亚微米GaAs MESFET二维数值模拟
半导体物理 半导体器件 模拟 数值分析
1990/3/29
本文用计入热电子效应的动量能量守恒模型讨论了亚微米GaAs MESFET二维数值模拟。为了减少计算量进行了模型简化和算法选择。文中给出并分析了三种典型器件的模用范果,根据模拟结果,研究了小尺寸器件中的速度过冲效应并得出常规的漂移扩散模型的适拟结围。
A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
GaAs Mesfet Si NMOS ESD Behaviour
1987/1/31
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET...