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Multiple Dose He Ion Implantation into n-GaN for Electrical Isolation
He Ion n-GaN Electrical Isolation
2004/3/21
In this work, Wurtzite GaN films were implanted with 15KeV, 55KeV and 150KeV He ion respectively with various doses at room temperature. One of the groups of samples were annealed at 750 0C for 20 min...