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High-Speed Vertical-Cavity Laser Diodes at 1.55 μm
High-Speed Vertical-Cavity Laser Diodes
2004/3/21
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) for 1.55 μm wavelength, 3dB-cut-off-frequencies around 8 GHz, modulation bandwidths up to 10 Gbit/s and excellent stationary...
The operation principles of electrically tunable laser diodes, the device structures for continuous and discontinuous tuning and the relevant device characteristics are presented. Recent progress with...
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
AlGaInP/GaInP Laser Molecular Beam Epitaxy
1996/3/29
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two ki...