搜索结果: 1-5 共查到“电子科学与技术 Hot-carrier”相关记录5条 . 查询时间(0.042 秒)
Statistical Model of Hot-Carrier Degradation and Lifetime Prediction for P-MOS Transistors
Hot-carrier P-MOS transistor lifetime prediction
2009/7/28
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2002/7/3
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing
n-MOSFET Defects Stress Hot-carrier Aging
2000/4/25
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spati...
Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
Stress relaxation diode parameters
1999/5/9
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
1998/4/15
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...