搜索结果: 1-13 共查到“光电子技术 SOI”相关记录13条 . 查询时间(0.092 秒)
上海微系统所在八英寸SOI/铌酸锂异质集成技术方面取得重要进展（图）
铌酸锂异质 集成 电光调制
2024/3/13
2024年3月13日，中国科学院上海微系统与信息技术研究所硅基材料与集成器件实验室蔡艳研究员、欧欣研究员联合团队，在通讯波段硅基铌酸锂异质集成电光调制器方面取得了重要进展。团队成员利用上海微技术工业研究院标准180 nm硅光工艺在八英寸 SOI上制备了硅光芯片，然后基于“离子刀”异质集成技术（图1），通过直接键合的方式将铌酸锂与SOI晶圆实现异质集成，并通过干法刻蚀技术实现了硅光芯片波导与LN电光...
条形和脊型SOI波导微环结构传感性能研究
条形和脊型波导 微环谐振腔 生物传感器 横截面
2014/6/10
使用时域有限差分(FDTD)方法研究了基于SOI微环谐振腔结构的条形和脊型波导,探究了微环谐振腔应用于生物传感的理论。分析了结构的几何尺寸对生物传感器灵敏度的影响。通过分析条形和脊型波导的模场分布图,解释了条形波导的灵敏度明显高于脊型波导的原因,且随着波导宽度的增加其灵敏度系数的变化遵循相同的趋势。并且,当条形波导取得最高的灵敏度系数时,其横截面是方形的,然而脊型波导的最大灵敏度值对应的却是不完全...
Athermal AWGs in SOI by overlaying a Polymer Cladding on Narrowed Arrayed Waveguides
Integrated Optics Components Integrated Optics Devices
2011/5/22
Athermal AWGs in SOI are experimentally demonstrated for the first time to our knowledge. By using narrowed arrayed waveguides and overlaying of polymer, we obtain a wavelength temperature dependence ...
Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology
photodetectors lasers III-V/SOI technology
2011/5/15
We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detector...
Horizontal p-i-n High-Speed Ge Waveguide Detector on Large Cross-section SOI Waveguide
Photodetectors Integrated optics devices Photonic integrated circuits
2010/6/10
We report a novel high-speed Ge photodetector on a large cross-section SOI waveguide platform.The device is butt-coupled with waveguide using a horizontal p-i-n junction configuration to enable high-s...
Integrated Drop-Filter for Dispersion Compensation Based on SOI Rib Waveguides
Dispersion compensation devices Integrated optics devices
2010/6/8
A drop-filter for dispersion compensation based on tapered Bragg gratings in SOI waveguides is presented. We show fabrication and characterization of the device, which separates one WDM channel with a...
基于光纤陀螺的小型化和工程化设计要求，提出模块化设计概念。设计了一种Y型SOI波导耦合器，用于光纤陀螺光收发模块。此结构具有形式简单、谱宽、加工工艺成熟和易于实现光电集成等技术优势。理论上分析了波导结构参数对其特征参数（分光比、损耗）的影响，优化参数设计，通过模场匹配理论减小器件损耗。最后，对波导耦合器加工工艺进行了讨论，采用电子束光刻技术加工出波导掩膜版，并对加工工艺参数进行了优化。实验结果表明...
部分耗尽SOI MOSFET总剂量效应与偏置状态的关系
绝缘体上的硅 总剂量辐射 背沟道 掩埋氧化层
2009/7/29
实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.
Heterogeneously Integrated SOI Compound Semiconductor Photonics
Heterogeneously Integrated SOI Compound Semiconduc Photonics
2009/7/15
We present a review of recent progress in III-V on silicon heterogeneous integration technology. Both fabrication technology and devices are discussed.
All-Optical Wavelength Converter with InP Micro-disk Laser Integrated on SOI
All-Optical Wavelength Converter Micro-disk Laser Integrated SOI
2008/7/31
An all-optical wavelength converter is demonstrated using an InP micro-disk laser on SOI. In this configuration, no extra probe beam is needed. The control power is as low as several micro-watts.
Enhanced Nonlinearity in SOI Microcavities by III-V/SOI Heterogeneous Integration
Enhanced Nonlinearity SOI Microcavities III-V/SOI Heterogeneous Integration
2008/7/31
We demonstrate enhanced nonlinearity in an SOI microcavity by heterogeneously integrating a III-V overlay on top of the SOI waveguide layer. Nonlinear transmission and all-optical modulation is observ...
SOI通道转换型多模干涉耦合器的研究
2007/8/20
设计和制作了基于SOI的通道转换型多模干涉耦合器。用二维BPM方法分析了耦合器的性能与多模波导宽度和长度的依赖关系.制作出的耦合器能实现良好的通道转换,器件的功率转换比为73,附加损耗为2.2 dB.提高器件制作的精度将能进一步改善耦合器的性能.