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Reduction of hybrid silicon laser thermal impedance using Poly Si thermal shunts
Optoelectronics Lasers and laser optics Optical devices
2011/5/26
We present a hybrid silicon evanescent laser that uses poly-silicon thermal shunts to reduce the device thermal impedance from 41.5 to 33.5 deg. C/W.
High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films
Poly-Si TFT Laser crystallization Lateral crystal growth
2009/6/9
The liquid-solid interface motion and the temperature history of thin Si films during short pulse (< 30 ns) excimer laser annealing are observed by in-situ diagnostics. Substantial supercooling (> 200...
Fabrication of High Quality Poly-Si TFTs by Using Ar-Laser Irradiated Sputter-Si Films
Polycrystalline Si Sputtering Ar-laser
2009/6/9
Precursor a-Si films are deposited by RF planar magnetron sputtering in argon gas at 200 °C substrate temperature. Properties of the a-Si films have large dependences on sputtering gas pressure. Sheet...