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High Performance Ge/Si Avalanche Photodiodes Development in Intel
Photodetectors Optical communications
2011/5/26
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically int...
Using a Microcontroller to Optimize the Bias Voltage of Balanced Photodiodes to Minimize Even-Order Distortion in Analog Fiber-Optic Links
Radio frequency photonics Photodiodes Fiber optic links subsystems
2010/6/4
Use of a microcontroller-based bias board for balanced photodiodes improves even-order distortion cancellation due to voltage dependent responsivity nonlinearities.The bias board improves the second o...
The development of the 1.27 μm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)
Avalanche photodiodes Optical communications
2010/6/4
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Photodiodes with Monolithically Integrated Wilkinson Power Combiner
Photonic integrated circuits Photodetectors
2010/6/4
We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the ...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2009/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2009/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.