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Prototype Shows How Tiny Photodetectors Can Double Their Efficiency（图）
Prototype Tiny Photodetectors Double Their Efficiency
2017/10/9
Physicists at the University of California, Riverside have developed a photodetector – a device that senses light – by combining two distinct inorganic materials and producing quantum mechanical proce...
Crumpling approach enhances photodetectors' light responsivity
Crumpling enhances photodetectors light responsivity
2016/4/6
Researchers from the University of Illinois at Urbana-Champaign have demonstrated a new approach to modifying the light absorption and stretchability of atomically thin two-dimensional (2D) materials ...
A 400 Gb/s WDM Receiver Using a Low Loss Silicon Nitride AWG Integrated with Hybrid Silicon Photodetectors
A 400 Gb/s WDM Receiver a Low Loss Silicon Nitride AWG Integrated Hybrid Silicon Photodetectors
2014/11/6
A heterogeneously integrated WDM receiver based on an AWG demultiplexer and hybrid silicon/InGaAs detectors is presented in a novel platform that combines hybrid silicon components with ultra-low loss...
Optimization of Duty Ratio of Metallic Grating Arrays for Infrared Photodetectors
Metallic Gratings, Duty Ratio, Infrared Waveband, QWIP
2011/9/30
Influence of duty ratio of metallic gratings applied in quantum well infrared photodetector (QWIP) with detection ranging from 3 μm to 5 μm was studied in this paper. The influence on longer enhanced ...
Nonlinearity and Phase Noise in High-Current Photodetectors
Photodetectors Radio frequency photonics
2011/5/22
Great progress has been made in the past decade in developing high-current photodetec-tors, but the modeling of these devices has not kept pace. The status of the devices and the models is reviewed.
Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology
photodetectors lasers III-V/SOI technology
2011/5/15
We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detector...
Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region
p-i-n photodetector diluted nitrides
2011/5/4
Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths abo...
Coherent Detection of a 50 Gb/s QPSK Signal Using an InP 90°Hybrid Monolithically Integrated with Balanced Photodetectors
Coherent Detection QPSK Signal Hybrid Monolithically Integrated
2009/7/17
Error-free detection of a single-polarization 50 Gb/s NRZ-QPSK signal using a coherent detector based on monolithic integration of a waveguide 90°hybrid with two pairs of high-speed balanced photo-det...
Ge-on-Si Photodetectors for Optical Communications
Ge-on-Si Photodetectors Optical Communications
2009/7/17
Ge-on-Si waveguide integrated photodetectors including Metal-Semiconductor-Metal (MSM), vertical PIN and lateral PIN diodes are reviewed.
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process
High-Speed Near Infrared Optical Receivers Ge Waveguide Photodetectors Integrated CMOS Process
2009/5/19
We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of...
New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors
growth models metalorganic vapor phase epitaxy (MOVPE)
2009/4/10
In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of ...
Compact Silicon-on-Insulator Wavelength Demultiplexer with Heterogeneously Integrated InAlAs/InGaAs Photodetectors
Silicon-on-Insulator Wavelength Demultiplexer Heterogeneously Integrated InAlAs/InGaAs Photodetectors
2008/7/31
We present experimental results of a 4-channel demultiplexer with integrated photodetectors. The device consists of a silicon-on-insulator planar concave grating demultiplexer and heterogeneously inte...
Ge-on-Si Photodetectors with 33 GHz Bandwidth Implemented by RPCVD
Photodetectors Bandwidth Implemented RPCVD
2008/7/31
We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 μ m-diameter at a wavelength of 1550 nm.
Resonant microcavity enhanced infrared photodetectors
optoelectronic device characterization
2007/4/4
Resonant cavity enhanced (RCE) infrared photodetectors are used in many applications due to their high quantum efficiency and large bandwidth. Therefore, wide device diversity is desired. In this pape...
Functionally graded materials (FGM) find widespread for mechanical applications. Nowadays, they become more and more attractive in fabrication of electronic and optoelectronic devices. This is due to ...