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溅射及RTA处理对ITO薄膜特性的影响
溅射 RTA处理 ITO薄膜
2009/2/11
采用RF-磁控溅射生长铟锡氧化物薄膜(ITO),研究了生长条件、快速热退火(RTA)温度对薄膜的晶化情况、透过率、电导率以及表面形貌的影响.结果表明:改变In2-x3+(Snx4+·e)O3制备过程中的氧含量使Sn4+·e对电子束缚能力发生变化,过高的氧分压使费米能级EF降低,功函数Ws增大,氧气流量为2 ml/min、退火温度为450℃时薄膜电阻率最低为2.5×10-4 Ω·cm,透过率达88%...
Characterization of ITO/CdO/glass thin films evaporated by electron beam technique
thin films ITO CdO buffer layer electron beam optoelectronic properties
2008/7/24
A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical
properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation
technique. The effects o...