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Thermal Arrest Memory Effect in Ni-Mn-Ga Alloys
Thermal Arrest Memory Effect Ni-Mn-Ga Alloys
2009/9/2
Dilatation characteristics were measured to investigate the thermal arrest memory effect in Ni53.6Mn27.1Ga19.3 and Ni54.2Mn29.4Ga16.4 alloys. Interruption of the martensite-austenite phase transformat...
磁控溅射Ni-Mn-Ga薄膜的磁致应变
Ni-Mn-Ga 形状记忆合金 薄膜 磁致应变
2007/12/18
摘要 采用直流磁控溅射的方法,在NaCl基底上沉积了Ni-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变。结果表明,薄膜表面可见大小不一的团簇颗粒,具有明显的岛状结构,表明Ni-Mn-Ga薄膜的形成为典型的核生长型机制。热处理前的薄膜具有部分非晶存在,热处理后薄膜晶化为多晶形态。无约束薄膜在磁场下呈现负的磁致应变,在1.3T磁场下,其最大应变值可达-0.008%,...